| 參數(shù)名稱(chēng) | 參數(shù)值 |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 15A |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 3.6V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 9.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 741pF @ 30V |
| Power - Max | 2.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
新聞資訊
Texas Instruments FET、MOSFET 陣列 產(chǎn)品 CSD88539ND
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