| 參數名稱 | 參數值 |
|---|---|
| Product Status | Not For New Designs |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate, 1.2V Drive |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 100mA |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 100mA, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 100μA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 7.1pF @ 10V |
| Power - Max | 120mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-SMD, Flat Leads |
| Supplier Device Package | VMT6 |
新聞資訊
ROHM Semiconductor FET、MOSFET 陣列 產品 VT6M1T2CR
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