| 參數名稱 | 參數值 |
|---|---|
| Product Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12 V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 1.3A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 2.4 nC @ 4.5 V |
| Vgs (Max) | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 6 V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 700mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-WEMT |
| Package / Case | 6-SMD, Flat Leads |
新聞資訊
ROHM Semiconductor 單 FET、MOSFET 產品 ES6U1T2R
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