| 參數(shù)名稱 | 參數(shù)值 |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 5.5V |
| Rds On (Max) @ Id, Vgs | 98mOhm @ 1.9A, 5.5V |
| Vgs(th) (Max) @ Id | 2.4V @ 18mA |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 6 V |
| Vgs (Max) | +6V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 56W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DFN8080K |
| Package / Case | 8-PowerDFN |
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ROHM Semiconductor 單 FET、MOSFET 產(chǎn)品 GNP1070TC-ZE2
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