
參數名稱 | 參數值 |
---|---|
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 585mOhm @ 2.8A, 10V |
Vgs(th) (Max) @ Id | 5V @ 230μA |
Gate Charge (Qg) (Max) @ Vgs | 16.5 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 48W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220FM |
Package / Case | TO-220-3 Full Pack |
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ROHM Semiconductor 單 FET、MOSFET 產品 R6509KNXC7G
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