SCT2450KEHRC11
¥87.48
1200V, 10A, THD, SILICON-CARBIDE
參數(shù)名稱 | 參數(shù)值 |
---|---|
Product Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Rds On (Max) @ Id, Vgs | 585mOhm @ 3A, 18V |
Vgs(th) (Max) @ Id | 4V @ 900μA |
Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 18 V |
Vgs (Max) | +22V, -6V |
Input Capacitance (Ciss) (Max) @ Vds | 463 pF @ 800 V |
FET Feature | - |
Power Dissipation (Max) | 85W (Tc) |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247N |
Package / Case | TO-247-3 |
新聞資訊
ROHM Semiconductor 單 FET、MOSFET 產(chǎn)品 SCT2450KEHRC11
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