
參數(shù)名稱 | 參數(shù)值 |
---|---|
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600 V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 15V |
Rds On (Max) @ Id, Vgs | 390mOhm @ 6A, 15V |
Vgs(th) (Max) @ Id | 7V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 15 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 100 V |
FET Feature | - |
Power Dissipation (Max) | 160W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | LPTS |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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ROHM Semiconductor 單 FET、MOSFET 產(chǎn)品 R6012JNJGTL
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