| 參數(shù)名稱 | 參數(shù)值 |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta), 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 1.5A, 10V, 137mOhm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V, 11nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 505pF @ 20V |
| Power - Max | 900mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 8-SMD, Flat Leads |
| Supplier Device Package | 8-ECH |
新聞資訊
Texas Instruments FET、MOSFET 陣列 產(chǎn)品 VEC2616-TL-H-Z
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