| 參數名稱 | 參數值 |
|---|---|
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta), 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 3.9nC @ 5V, 8.5nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 230pF @ 10V, 850pF @ 10V |
| Power - Max | 2W (Ta) |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
| Package/ Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOP |
新聞資訊
ROHM Semiconductor FET、MOSFET 陣列 產品 SP8M3FU6TB1
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