| 參數(shù)名稱 | 參數(shù)值 |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Common Source |
| FET Feature | Logic Level Gate, 5V Drive |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 39A |
| Rds On (Max) @ Id, Vgs | 12.4mOhm @ 10A, 8V |
| Vgs(th) (Max) @ Id | 1.4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 15.2nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 2390pF @ 10V |
| Power - Max | 2.5W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 8-PowerVDFN |
| Supplier Device Package | 8-VSON (3.3x3.3) |
新聞資訊
Texas Instruments FET、MOSFET 陣列 產(chǎn)品 CSD85312Q3E
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