QH8M22TCR
￥9.22
QH8M22 IS THE HIGH RELIABILITY T
| 參數(shù)名稱 | 參數(shù)值 |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta), 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 10μA, 3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 2.6nC @ 10V, 9.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 193pF @ 20V, 450pF @ 20V |
| Power - Max | 1.1W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 8-SMD, Flat Lead |
| Supplier Device Package | TSMT8 |
新聞資訊
ROHM Semiconductor FET、MOSFET 陣列 產(chǎn)品 QH8M22TCR
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