| 參數名稱 | 參數值 |
|---|---|
| Product Status | Not For New Designs |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate, 1.5V Drive |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 3.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 6V |
| Power - Max | 550mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 8-SMD, Flat Lead |
| Supplier Device Package | TSMT8 |
新聞資訊
ROHM Semiconductor FET、MOSFET 陣列 產品 QS8J11TCR
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