| 參數名稱 | 參數值 |
|---|---|
| Product Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12 V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 74mOhm @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 1.2mA |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 459 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Supplier Device Package | XLGA004-W-0808-RA01 |
| Package/ Case | 4-XFLGA, CSP |
新聞資訊
Panasonic 單 FET、MOSFET 產品 FJ4B01100L1
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